Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 78W
VCE(sat), (V), typ: 1.55 V
Qg,(nC),typ:38nC
Eoff, (mJ), typ: 0.2 mJ
VF, (V), typ: 2.2V
Irrm(A), type: 4.8A
Qrr, (nC), type: 228 nC
Packaging: TO220, TO220F, TO263
PTOT (Max.): 78W
VCE(sat), (V), typ: 1.55 V
Qg,(nC),typ:38nC
Eoff, (mJ), typ: 0.2 mJ
VF, (V), typ: 2.2V
Irrm(A), type: 4.8A
Qrr, (nC), type: 228 nC
Packaging: TO220, TO220F, TO263
Keywords:
Transistor, IGBT
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BLG15T65FDB
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO220, TO220F, TO263
Description:
PTOT (Max.): 78 W/VCE(sat), V, typ: 1.55 V/Qg, nC, typ: 38 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 78W
VCE(sat), (V), typ: 1.55 V
Qg,(nC),typ:38nC
Eoff, (mJ), typ: 0.2 mJ
VF, (V), typ: 2.2V
Irrm(A), type: 4.8A
Qrr, (nC), type: 228 nC
Packaging: TO220, TO220F, TO263
- PTOT (Max.): 78 W/VCE(sat), V, typ: 1.55 V/Qg, nC, typ: 38 nC
Keywords:
Transistor, IGBT
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