Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 83 W
VCE(sat), (V), typical: 1.4 V
Qg,(nC),type:39nC
Eoff, (mJ), typ: 0.14 mJ
VF, (V), typ: 1.35V
Irrm(A), type: 4A
Qrr, (nC), type: 227 nC
Package: TO252
PTOT (Max.): 83 W
VCE(sat), (V), typical: 1.4 V
Qg,(nC),type:39nC
Eoff, (mJ), typ: 0.14 mJ
VF, (V), typ: 1.35V
Irrm(A), type: 4A
Qrr, (nC), type: 227 nC
Package: TO252
Keywords:
Transistor, IGBT
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BLG10T65FUL
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO252
Description:
PTOT (Max.): 83 W/VCE(sat), (V), typical: 1.4 V/Qg, (nC), typical: 39 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 83 W
VCE(sat), (V), typical: 1.4 V
Qg,(nC),type:39nC
Eoff, (mJ), typ: 0.14 mJ
VF, (V), typ: 1.35V
Irrm(A), type: 4A
Qrr, (nC), type: 227 nC
Package: TO252
- PTOT (Max.): 83 W/VCE(sat), (V), typical: 1.4 V/Qg, (nC), typical: 39 nC
Keywords:
Transistor, IGBT
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