Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 48W
VCE(sat), (V), typ: 1.7 V
Qg,(nC),typ:72nC
Eoff, (mJ), typ: 0.32 mJ
VF, (V), typ: 2.2V
Irrm(A), type: 4.5A
Qrr, (nC), type: 374 nC
Package: TO220F
PTOT (Max.): 48W
VCE(sat), (V), typ: 1.7 V
Qg,(nC),typ:72nC
Eoff, (mJ), typ: 0.32 mJ
VF, (V), typ: 2.2V
Irrm(A), type: 4.5A
Qrr, (nC), type: 374 nC
Package: TO220F
Keywords:
Transistor, IGBT
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BLG30T65FDK
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO220F
Description:
PTOT (Max.): 48 W/VCE(sat), V, typ: 1.7 V / Qg, nC, typ: 72 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 48W
VCE(sat), (V), typ: 1.7 V
Qg,(nC),typ:72nC
Eoff, (mJ), typ: 0.32 mJ
VF, (V), typ: 2.2V
Irrm(A), type: 4.5A
Qrr, (nC), type: 374 nC
Package: TO220F
- PTOT (Max.): 48 W/VCE(sat), V, typ: 1.7 V / Qg, nC, typ: 72 nC
Keywords:
Transistor, IGBT
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