Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 171A
RDS(on) (Max.): 3.8 mΩ
Qg(Type): 109 nC
Package: TO220
VDS (Max.): 100V
ID (Max.): 171A
RDS(on) (Max.): 3.8 mΩ
Qg(Type): 109 nC
Package: TO220
Keywords:
Transistor, MOS, MOSFET
Pre
Next
BLP038N10GL-P.B
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO220
Description:
VDS (Max.): 100V / ID (Max.): 171A / RDS(on) (Max.): 3.8 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 171A
RDS(on) (Max.): 3.8 mΩ
Qg(Type): 109 nC
Package: TO220
- VDS (Max.): 100V / ID (Max.): 171A / RDS(on) (Max.): 3.8 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.