Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 154A
RDS(on) (Max.): 3.8 mΩ
Qg(Type): 109 nC
Package: TO252
VDS (Max.): 100V
ID (Max.): 154A
RDS(on) (Max.): 3.8 mΩ
Qg(Type): 109 nC
Package: TO252
Keywords:
Transistor, MOS, MOSFET
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BLP038N10GL-D
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO252
Description:
VDS (Max.): 100V / ID (Max.): 154A / RDS(on) (Max.): 3.8 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 154A
RDS(on) (Max.): 3.8 mΩ
Qg(Type): 109 nC
Package: TO252
- VDS (Max.): 100V / ID (Max.): 154A / RDS(on) (Max.): 3.8 mΩ
Keywords:
Transistor, MOS, MOSFET
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