BLP038N10GL-Q
+
  • BLP038N10GL-Q

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 147A
RDS(on) (Max.): 4.5 mΩ
Qg(Type): 109 nC
Package: PDFN5x6

Keywords:

Transistor, MOS, MOSFET

BLP038N10GL-Q

N-channel Enhancement-mode Power MOSFET

Category:

Brand:

Shanghai Belling

Encapsulation:

PDFN5x6

Description:

VDS (Max.): 100V / ID (Max.): 147A / RDS(on) (Max.): 4.5 mΩ

Share now

  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): 100V
    ID (Max.): 147A
    RDS(on) (Max.): 4.5 mΩ
    Qg(Type): 109 nC
    Package: PDFN5x6
  • VDS (Max.): 100V / ID (Max.): 147A / RDS(on) (Max.): 4.5 mΩ

Keywords:

Transistor, MOS, MOSFET

High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
Low-noise amplifier chip for GPS receivers
Learn more Learn more
< 1234...489 >

Do you need our help?

Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.

View the Privacy Protection Commitment
Submit now