BLM10P03
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO252, PDFN 3.3 × 3.3, SOP8, PDFN 5 × 6
Description:
VDS (Max.): -30 V / ID (Max.): -24 A / RDS(on) (Max.): 10 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): -30V
ID (Max.): -24A
RDS(on) (Max.): 10 mΩ
Qg(Type):36nC
Packaging: TO252, PDFN3.3×3.3, SOP8, PDFN5×6
- VDS (Max.): -30 V / ID (Max.): -24 A / RDS(on) (Max.): 10 mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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