BLM10N20
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO247
Description:
VDS (Max.): 200 V / ID (Max.): 100 A / RDS(on) (Max.): 10.8 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 200V
ID (Max.): 100A
RDS(on)(Max.): 10.8 mΩ
Qg(Type):266 nC
Package: TO247
- VDS (Max.): 200 V / ID (Max.): 100 A / RDS(on) (Max.): 10.8 mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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