BLM11N15
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO220
Description:
VDS (Max.): 150 V / ID (Max.): 100 A / RDS(on) (Max.): 10 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 150V
ID (Max.): 100A
RDS(on) (Max.): 10 mΩ
Qg(Type): 152 nC
Package: TO220
- VDS (Max.): 150 V / ID (Max.): 100 A / RDS(on) (Max.): 10 mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.