BLM08P02
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
PDFN3.3×3.3, SOP8
Description:
VDS (Max.): -20V / ID (Max.): -40A / RDS(on) (Max.): 8mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): -20V
ID (Max.): -40A
RDS(on) (Max.): 8 mΩ
Qg(Type): 45 nC
Packaging: PDFN 3.3 × 3.3, SOP8
- VDS (Max.): -20V / ID (Max.): -40A / RDS(on) (Max.): 8mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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