Product Technical Specifications
Brand: Qixing Huachuang
Operating voltage: 1.65V to 2.0V
Fast read frequency: 166 MHz
Device erase time: 100 seconds (typical value)
Standby current: 40μA (typical value)
Shutdown current: 12μA (typical value)
Programming/Erasing Cycles: At least 100,000
Data retention period: 20 years (typical value)
Compatible Model: MT25QU01GBBB8E12
Operating voltage: 1.65V to 2.0V
Fast read frequency: 166 MHz
Device erase time: 100 seconds (typical value)
Standby current: 40μA (typical value)
Shutdown current: 12μA (typical value)
Programming/Erasing Cycles: At least 100,000
Data retention period: 20 years (typical value)
Compatible Model: MT25QU01GBBB8E12
Keywords:
Flash memory, flash, memory
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HCEFLB01GBN
SPI NOR FLASH
Brand:
Qixing Huachuang
Encapsulation:
/
Description:
Operating voltage: 1.65V–2.0V / Fast read frequency: 166MHz / Device erase time: 100s (typical)
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- Product Description
- Description
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Brand: Qixing Huachuang
Operating voltage: 1.65V to 2.0V
Fast read frequency: 166 MHz
Device erase time: 100 seconds (typical value)
Standby current: 40μA (typical value)
Shutdown current: 12μA (typical value)
Programming/Erasing Cycles: At least 100,000
Data retention period: 20 years (typical value)
Compatible Model: MT25QU01GBBB8E12
- Operating voltage: 1.65V–2.0V / Fast read frequency: 166MHz / Device erase time: 100s (typical)
Keywords:
Flash memory, flash, memory
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