HCE29GL512M
+
  • HCE29GL512M

Product Technical Specifications

Brand: Qixing Huachuang
Power supply voltage (VCC): 2.7V–3.6V
IO Voltage (VIO): 1.65V – VCC
Capacity: 512 Mbit (32M × 8 bits / 16M × 16 bits)
Programming/Erasing Cycles: 100,000 times
Data retention period: 20 years

Keywords:

Flash memory, flash, memory

HCE29GL512M

Parallel NOR FLASH

Category:

Brand:

Qixing Huachuang

Encapsulation:

/

Description:

IO Voltage (VIO): 1.65V – VCC / Supply Voltage (VCC): 2.7V – 3.6V / Capacity: 512 Mbit

Share now

  • Product Description
  • Description
  • Brand: Qixing Huachuang
    Power supply voltage (VCC): 2.7V–3.6V
    IO Voltage (VIO): 1.65V – VCC
    Capacity: 512 Mbit (32M × 8 bits / 16M × 16 bits)
    Programming/Erasing Cycles: 100,000 times
    Data retention period: 20 years
  • IO Voltage (VIO): 1.65V – VCC / Supply Voltage (VCC): 2.7V – 3.6V / Capacity: 512 Mbit

Keywords:

Flash memory, flash, memory

High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
Low-noise amplifier chip for GPS receivers
Learn more Learn more
< 1234...489 >

Do you need our help?

Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.

View the Privacy Protection Commitment
Submit now