Product Technical Specifications
Brand: Qixing Huachuang
Operating voltage: 1.65V to 2.0V
Storage capacity: 256 MB
Page programming time: 0.18 ms (typical value)
Sector erase time: 30ms (typical value)
Block erase time: 0.1/0.2 s (typical value)
Device erase time: 100s (typical value)
Data retention period: 20 years (typical value)
Compatible Model: MT25QU02GCBB8E12
Operating voltage: 1.65V to 2.0V
Storage capacity: 256 MB
Page programming time: 0.18 ms (typical value)
Sector erase time: 30ms (typical value)
Block erase time: 0.1/0.2 s (typical value)
Device erase time: 100s (typical value)
Data retention period: 20 years (typical value)
Compatible Model: MT25QU02GCBB8E12
Keywords:
Flash memory, flash, memory
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HCEFLB02GBN
SPI NOR FLASH
Brand:
Qixing Huachuang
Encapsulation:
/
Description:
Operating voltage: 1.65V–2.0V / Storage capacity: 256 MB / Page programming time: 0.18 ms
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- Product Description
- Description
-
Brand: Qixing Huachuang
Operating voltage: 1.65V to 2.0V
Storage capacity: 256 MB
Page programming time: 0.18 ms (typical value)
Sector erase time: 30ms (typical value)
Block erase time: 0.1/0.2 s (typical value)
Device erase time: 100s (typical value)
Data retention period: 20 years (typical value)
Compatible Model: MT25QU02GCBB8E12
- Operating voltage: 1.65V–2.0V / Storage capacity: 256 MB / Page programming time: 0.18 ms
Keywords:
Flash memory, flash, memory
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