HCE29GL01GM
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  • HCE29GL01GM

Product Technical Specifications

Brand: Qixing Huachuang 
Power supply voltage (VCC): 2.7V–3.6V 
IO Voltage (VIO): 1.65V – VCC 
Capacity: 1 Gbit (128M × 8 bit / 64M × 16 bit) 
Programming/Erasing Cycles: 100,000 times 
Data retention period: 20 years 
Flash memory component HCE29GL01GM is a high-performance storage solution designed for reliable data retention and fast access in embedded systems. It typically features non-volatile NAND flash architecture, allowing data to be stored even when power is removed. With stable read and write speeds, it is suitable for applications such as industrial control, consumer electronics, communication devices, and automotive systems.

This component offers strong endurance, supporting multiple program and erase cycles, which ensures long service life in demanding environments. It is designed with efficient power consumption, making it ideal for energy-sensitive applications. The compact package enables easy integration into circuit boards, while its robust performance ensures data integrity and system stability

Keywords:

Flash memory, flash, memory

HCE29GL01GM

Parallel NOR FLASH

Category:

Brand:

Qixing Huachuang

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Description:

IO Voltage (VIO): 1.65V – VCC / Supply Voltage (VCC): 2.7V – 3.6V / Capacity: 1 Gbit

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  • Product Description
  • Description
  • Brand: Qixing Huachuang 
    Power supply voltage (VCC): 2.7V–3.6V 
    IO Voltage (VIO): 1.65V – VCC 
    Capacity: 1 Gbit (128M × 8 bit / 64M × 16 bit) 
    Programming/Erasing Cycles: 100,000 times 
    Data retention period: 20 years 
    Flash memory component HCE29GL01GM is a high-performance storage solution designed for reliable data retention and fast access in embedded systems. It typically features non-volatile NAND flash architecture, allowing data to be stored even when power is removed. With stable read and write speeds, it is suitable for applications such as industrial control, consumer electronics, communication devices, and automotive systems.

    This component offers strong endurance, supporting multiple program and erase cycles, which ensures long service life in demanding environments. It is designed with efficient power consumption, making it ideal for energy-sensitive applications. The compact package enables easy integration into circuit boards, while its robust performance ensures data integrity and system stability

  • IO Voltage (VIO): 1.65V – VCC / Supply Voltage (VCC): 2.7V – 3.6V / Capacity: 1 Gbit

Keywords:

Flash memory, flash, memory

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