HCE25WQ128MS
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  • HCE25WQ128MS

Product Technical Specifications

Brand: Qixing Huachuang 
Operating voltage: 1.65V to 3.6V 
Serial Flash: 128 M-bit 
Page program time: 0.3 ms (typical value) 
Sector erase time: 30 ms (typical value) 
Block erase time: 0.1/0.2 s (typical values) 
Full erase time: 100s (typical value) 
Data retention period: 20 years (typical value) 
Embedded memory devices are essential components in modern electronic systems, providing reliable on-chip data storage for processors and controllers. They enable fast data access, low power consumption, and stable performance in applications such as consumer electronics, automotive systems, industrial control, and IoT devices, supporting efficient and secure system operation

Keywords:

Flash memory, flash, memory

HCE25WQ128MS

SPI NOR FLASH

Category:

Brand:

Qixing Huachuang

Encapsulation:

/

Description:

Operating Voltage: 1.65V–3.6V / Serial Flash: 128M-bit / Page Programming Time: 0.3ms

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  • Product Description
  • Description
  • Brand: Qixing Huachuang 
    Operating voltage: 1.65V to 3.6V 
    Serial Flash: 128 M-bit 
    Page program time: 0.3 ms (typical value) 
    Sector erase time: 30 ms (typical value) 
    Block erase time: 0.1/0.2 s (typical values) 
    Full erase time: 100s (typical value) 
    Data retention period: 20 years (typical value) 
    Embedded memory devices are essential components in modern electronic systems, providing reliable on-chip data storage for processors and controllers. They enable fast data access, low power consumption, and stable performance in applications such as consumer electronics, automotive systems, industrial control, and IoT devices, supporting efficient and secure system operation

  • Operating Voltage: 1.65V–3.6V / Serial Flash: 128M-bit / Page Programming Time: 0.3ms

Keywords:

Flash memory, flash, memory

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