Product Technical Specifications
Brand: Shanghai Belling
VDSS(V): 1200V
ID(A): 120A
VGS(th)(V)(Min.): 1.8 V
VGS(th)(V)(Typ.): 2.5V
RDS(ON) (mΩ) @ VGS = 15V (Typ.): 16 mΩ
RDS(ON) (mΩ) @ VGS = 15V (Max.): 22 mΩ
VGS(th)(V)(Max.): 3.6 V
Package: TO247-4L
VDSS(V): 1200V
ID(A): 120A
VGS(th)(V)(Min.): 1.8 V
VGS(th)(V)(Typ.): 2.5V
RDS(ON) (mΩ) @ VGS = 15V (Typ.): 16 mΩ
RDS(ON) (mΩ) @ VGS = 15V (Max.): 22 mΩ
VGS(th)(V)(Max.): 3.6 V
Package: TO247-4L
Keywords:
Transistor, MOS, MOSFET
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BLC16N120
N-channel Enhancement-Type Planar MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO247-4L
Description:
VDSS(V): 1200V / ID(A): 120A / VGS(th)(V)(Min.): 1.8V
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- Product Description
- Description
-
Brand: Shanghai Belling
VDSS(V): 1200V
ID(A): 120A
VGS(th)(V)(Min.): 1.8 V
VGS(th)(V)(Typ.): 2.5V
RDS(ON) (mΩ) @ VGS = 15V (Typ.): 16 mΩ
RDS(ON) (mΩ) @ VGS = 15V (Max.): 22 mΩ
VGS(th)(V)(Max.): 3.6 V
Package: TO247-4L
- VDSS(V): 1200V / ID(A): 120A / VGS(th)(V)(Min.): 1.8V
Keywords:
Transistor, MOS, MOSFET
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