Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 300W
VCE(sat), (V), typical: 1.6 V
Qg,(nC),type:106 nC
Eoff, (mJ), typ: 0.81 mJ
VF, (V), Type: 2V
Irrm(A), typ: 4.4A
Qrr, (nC), type: 220 nC
Packaging: TO247, TO3PF, TO3PN
PTOT (Max.): 300W
VCE(sat), (V), typical: 1.6 V
Qg,(nC),type:106 nC
Eoff, (mJ), typ: 0.81 mJ
VF, (V), Type: 2V
Irrm(A), typ: 4.4A
Qrr, (nC), type: 220 nC
Packaging: TO247, TO3PF, TO3PN
Keywords:
Transistor, IGBT
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BLQG50T65FDLA
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO247, TO3PF, TO3PN
Description:
PTOT (Max.): 300 W/VCE(sat), (V), typical: 1.6 V / Qg, (nC), typical: 106 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 300W
VCE(sat), (V), typical: 1.6 V
Qg,(nC),type:106 nC
Eoff, (mJ), typ: 0.81 mJ
VF, (V), Type: 2V
Irrm(A), typ: 4.4A
Qrr, (nC), type: 220 nC
Packaging: TO247, TO3PF, TO3PN
- PTOT (Max.): 300 W/VCE(sat), (V), typical: 1.6 V / Qg, (nC), typical: 106 nC
Keywords:
Transistor, IGBT
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