Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 305A
RDS(on) (Max.): 2.3 mΩ
Qg(Type): 240 nC
Packaging: TO220, TO263, TO247
VDS (Max.): 100V
ID (Max.): 305A
RDS(on) (Max.): 2.3 mΩ
Qg(Type): 240 nC
Packaging: TO220, TO263, TO247
Keywords:
Transistor, MOS, MOSFET
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BLP023N10-PB.F
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO220, TO263, TO247
Description:
VDS (Max.): 100V / ID (Max.): 305A / RDS(on) (Max.): 2.3 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 305A
RDS(on) (Max.): 2.3 mΩ
Qg(Type): 240 nC
Packaging: TO220, TO263, TO247
- VDS (Max.): 100V / ID (Max.): 305A / RDS(on) (Max.): 2.3 mΩ
Keywords:
Transistor, MOS, MOSFET
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