Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 305A
RDS(on) (Max.): 2 mΩ
Qg(Type): 240 nC
Package: TO263-7
VDS (Max.): 100V
ID (Max.): 305A
RDS(on) (Max.): 2 mΩ
Qg(Type): 240 nC
Package: TO263-7
Keywords:
Transistor, MOS, MOSFET
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BLP023N10-BA
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO263-7
Description:
VDS (Max.): 100 V / ID (Max.): 305 A / RDS(on) (Max.): 2 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 305A
RDS(on) (Max.): 2 mΩ
Qg(Type): 240 nC
Package: TO263-7
- VDS (Max.): 100 V / ID (Max.): 305 A / RDS(on) (Max.): 2 mΩ
Keywords:
Transistor, MOS, MOSFET
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