BL25N60
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO247, TO3PN
Description:
VDS (Max.): 600V / ID (Max.): 25A / RDS(on) (Max.): 250mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 600V
ID (Max.): 25A
RDS(on) (Max.): 250 mΩ
Qg(Type): 119 nC
Packaging: TO247, TO3PN
- VDS (Max.): 600V / ID (Max.): 25A / RDS(on) (Max.): 250mΩ
Keywords:
Transistor, MOS, MOSFET
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