BL25N50
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO3PN, TO3PF
Description:
VDS (Max.): 500 V / ID (Max.): 25 A / RDS(on) (Max.): 210 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 500V
ID (Max.): 25A
RDS(on) (Max.): 210 mΩ
Qg(Type): 72 nC
Packaging: TO3PN, TO3PF
- VDS (Max.): 500 V / ID (Max.): 25 A / RDS(on) (Max.): 210 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.