BL18N20
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO220F, TO251, TO252
Description:
VDS (Max.): 200 V / ID (Max.): 18 A / RDS(on) (Max.): 180 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 200V
ID (Max.): 18A
RDS(on) (Max.): 180 mΩ
Qg(Type): 23 nC
Packaging: TO220, TO220F, TO251, TO252
- VDS (Max.): 200 V / ID (Max.): 18 A / RDS(on) (Max.): 180 mΩ
Keywords:
Transistor, MOS, MOSFET
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