BL15N50
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  • BL15N50

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): 500V
ID (Max.): 15A
RDS(on) (Max.): 380 mΩ
Qg(Type): 48 nC
Packaging: TO220, TO220F

Keywords:

Transistor, MOS, MOSFET

BL15N50

Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Category:

Brand:

Shanghai Belling

Encapsulation:

TO220, TO220F

Description:

VDS (Max.): 500V / ID (Max.): 15A / RDS(on) (Max.): 380mΩ

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  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): 500V
    ID (Max.): 15A
    RDS(on) (Max.): 380 mΩ
    Qg(Type): 48 nC
    Packaging: TO220, TO220F
  • VDS (Max.): 500V / ID (Max.): 15A / RDS(on) (Max.): 380mΩ

Keywords:

Transistor, MOS, MOSFET

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