BLM3401
+
  • BLM3401

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): -30V
ID (Max.): -4.2A
RDS(on) (Max.): 50 mΩ
Qg(Type):nC
Package: SOT23

Keywords:

Transistors, trench-gate field-effect transistors, MOSFETs, MOS

BLM3401

Trench-gate metal-oxide-semiconductor field-effect transistor

Category:

Brand:

Shanghai Belling

Encapsulation:

SOT23

Description:

VDS (Max.): -30 V / ID (Max.): -4.2 A / RDS(on) (Max.): 50 mΩ

Share now

  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): -30V
    ID (Max.): -4.2A
    RDS(on) (Max.): 50 mΩ
    Qg(Type):nC
    Package: SOT23
  • VDS (Max.): -30 V / ID (Max.): -4.2 A / RDS(on) (Max.): 50 mΩ

Keywords:

Transistors, trench-gate field-effect transistors, MOSFETs, MOS

High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
Low-noise amplifier chip for GPS receivers
Learn more Learn more
< 1234...489 >

Do you need our help?

Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.

View the Privacy Protection Commitment
Submit now