BLM30P04
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO252, SOP8, PDFN 3.3x3.3, PDFN 5x6
Description:
VDS (Max.): -40V / ID (Max.): -29A / RDS(on) (Max.): 30mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): -40V
ID (Max.): -29A
RDS(on) (Max.): 30 mΩ
Qg(Type): 45 nC
Packaging: TO252, SOP8, PDFN3.3x3.3, PDFN5x6
- VDS (Max.): -40V / ID (Max.): -29A / RDS(on) (Max.): 30mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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