Naxinwei: Releases the NSI6602Ux, an isolated half-bridge driver with integrated power‑state feedback.
Naxin Micro We have launched the NSI6602Ux series of automotive-grade isolated half-bridge driver chips, which represent a comprehensive upgrade based on our flagship product, the NSI6602. The drive-side voltage is boosted to 32 V. , compared with the previous-generation product, it boasts enhanced shock resistance and improved system compatibility.
In addition, NSI6602Ux Integrated input/output-side power‑state feedback functionality and features high isolation voltage, low propagation delay, adjustable dead time, input interlock, and selectable undervoltage threshold, making it suitable for drive applications. Silicon carbide IGBTs and other components can be widely used in applications such as on-board chargers (OBC), DC-DC converters, and active suspension systems in new-energy vehicles.
Input/output-side power‑supply status feedback, enhancing the safety of power‑device switching.
In power electronic systems such as OBC/DC‑DC converters, industrial power supplies, and motor drives, the reliability of the driver IC directly determines the safe switching performance of the power devices. With the increasing adoption of third‑generation power devices like SiC and GaN, The device exhibits a more sensitive drive threshold and faster response speed. This significantly increases the system’s requirements for the accuracy of status monitoring and the timeliness of response of the driver chip.
Conventional solutions typically rely on external voltage‑monitoring circuits to determine whether the driver chip is ready. This approach not only increases system complexity but also introduces the risk of false triggering due to delays or interference, potentially leading to power‑device damage and system instability—serious safety hazards that, in turn, hinder the full realization of the performance advantages offered by third‑generation power devices.
Naxinwei’s NSI6602Ux innovatively integrates RDY Status Feedback Function , can Real-time output of chip power supply status , directly fed back to the MCU/DSP, enabling chip-level “readiness visibility.” Without requiring additional monitoring circuitry, it effectively mitigates risks such as premature drive activation and false triggering, thereby enhancing the switching safety of power devices at the system‑architecture level.
High-performance drive and multi-layered protection work in tandem to enhance system reliability and efficiency.
NSI6602Ux features 4A peak sourcing current and 6A peak sinking current Its powerful driving capability allows it to drive directly. IGBT Power devices such as SiC support switching frequencies of up to 2 MHz, eliminating the need for additional snubber circuits or driver amplifiers and significantly simplifying the peripheral circuit design.
Device support Maximum drive voltage of 32 V and incorporates undervoltage lockout (UVLO) protection, effectively addressing high-voltage surge scenarios. Additionally, it features a built-in input-side IN+/IN- interlock function, Prevent shoot-through risks between the upper and lower bridge arms at the hardware level. , significantly enhancing the system’s reliability and its resistance to electromagnetic interference. Furthermore, the dead‑time can be flexibly configured via the DT pin, and combined with multiple UVLO threshold options, it further improves the system’s design margin and adaptability.
In terms of performance, the NSI6602Ux features 45 ns propagation delay, 5 ns delay matching, 4 ns Pulse width distortion , at an industry-leading level. And it supports a high ±150 kV/μs… CMTI , effectively suppresses common-mode interference, prevents delay fluctuations, and maintains stable operation even under complex operating conditions.
Flexible control and interface‑compatible design reduce system complexity and BOM costs.
The NSI6602Ux supports two enable‑logic configurations—DIS and EN—allowing flexible adaptation to various control architectures. On the input side, it accommodates a wide supply voltage range of 2.8 V to 5.5 V, enabling direct compatibility with MCUs and DSPs without the need for additional level‑shifting circuitry.
By reducing the number of external components and simplifying the interface design and control logic, system design complexity and BOM costs are effectively lowered, while the overall solution’s versatility and scalability are enhanced.
NSI6602Ux Product Features:
5.7 kVrms isolation withstand voltage, capable of driving high-voltage SiC and IGBT devices.
High CMTI: 150 kV/μs
Input-side supply voltage: 2.8 V to 5.5 V, with undervoltage protection at 2.35 V.
Drive-side supply voltage: up to 32 V
Peak pull‑in current: +4 A / −6 A
Drive power undervoltage: two selectable levels, 8 V and 17 V.
Supports RDY reporting for power monitoring on both the input and output sides.
Programmable Dead Time
Supports enable logic control
Typical propagation delay: 45 ns
Operating ambient temperature: -40°C to 125°C
Compliant with the AEC-Q100 standard for automotive applications.
RoHS-compliant package types: SOW14/16, SOP16
Certified to multiple safety standards, including UL, VDE, and CQC.
Packaging and Component Selection
The NSI6602Ux series from Naxin Micro is now in full-scale mass production, offering a wide range of isolation voltage ratings, UVLO options, and package types to flexibly meet diverse application requirements.
(Source: Naxinwei Official Website)
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