Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 270W
VCE(sat), (V), typical: 1.1V
Qg,(nC),type:29nC
Package: TO263
PTOT (Max.): 270W
VCE(sat), (V), typical: 1.1V
Qg,(nC),type:29nC
Package: TO263
Keywords:
Transistor, IGBT
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BLQG5036
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO263
Description:
PTOT (Max.): 270 W/VCE(sat), V, typical: 1.1 V / Qg, nC, typical: 29 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 270W
VCE(sat), (V), typical: 1.1V
Qg,(nC),type:29nC
Package: TO263
- PTOT (Max.): 270 W/VCE(sat), V, typical: 1.1 V / Qg, nC, typical: 29 nC
Keywords:
Transistor, IGBT
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