Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 468W
VCE(sat), (V), typical: 1.6 V
Qg,(nC),type:146nC
Eoff, (mJ), typ: 1 mJ
VF, (V), typ: 1.65V
Irrm(A), type: 31A
Qrr, (nC), type: 1.7 nC
Package: TO247
PTOT (Max.): 468W
VCE(sat), (V), typical: 1.6 V
Qg,(nC),type:146nC
Eoff, (mJ), typ: 1 mJ
VF, (V), typ: 1.65V
Irrm(A), type: 31A
Qrr, (nC), type: 1.7 nC
Package: TO247
Keywords:
Transistor, IGBT
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BLG80T65FDK7
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO247
Description:
PTOT (Max.): 468 W/VCE(sat), V, typical: 1.6 V / Qg, nC, typical: 146 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 468W
VCE(sat), (V), typical: 1.6 V
Qg,(nC),type:146nC
Eoff, (mJ), typ: 1 mJ
VF, (V), typ: 1.65V
Irrm(A), type: 31A
Qrr, (nC), type: 1.7 nC
Package: TO247
- PTOT (Max.): 468 W/VCE(sat), V, typical: 1.6 V / Qg, nC, typical: 146 nC
Keywords:
Transistor, IGBT
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