Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 300W
VCE(sat), (V), typical: 2V
Qg,(nC),type:156nC
Eoff, (mJ), typical: 1.1 mJ
VF, (V), typ: 1.9 V
Irrm(A), typ: 2.8A
Qrr, (nC), type: 96 nC
Package: TO247
PTOT (Max.): 300W
VCE(sat), (V), typical: 2V
Qg,(nC),type:156nC
Eoff, (mJ), typical: 1.1 mJ
VF, (V), typ: 1.9 V
Irrm(A), typ: 2.8A
Qrr, (nC), type: 96 nC
Package: TO247
Keywords:
Transistor, IGBT
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BLG75T65FDK
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO247
Description:
PTOT (Max.): 300 W/VCE(sat), (V), typical: 2 V / Qg, (nC), typical: 156 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 300W
VCE(sat), (V), typical: 2V
Qg,(nC),type:156nC
Eoff, (mJ), typical: 1.1 mJ
VF, (V), typ: 1.9 V
Irrm(A), typ: 2.8A
Qrr, (nC), type: 96 nC
Package: TO247
- PTOT (Max.): 300 W/VCE(sat), (V), typical: 2 V / Qg, (nC), typical: 156 nC
Keywords:
Transistor, IGBT
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