Product Technical Specifications
Brand: Shanghai Belling
PTOT (Max.): 298 W
VCE(sat), (V), typ: 1.55 V
Qg,(nC),typ:110 nC
Eoff, (mJ), typical: 0.7 mJ
VF, (V), typ: 2.2V
Irrm(A), typ: 1.8A
Qrr, (nC), type: 109 nC
Packaging: TO3PN, TO247
PTOT (Max.): 298 W
VCE(sat), (V), typ: 1.55 V
Qg,(nC),typ:110 nC
Eoff, (mJ), typical: 0.7 mJ
VF, (V), typ: 2.2V
Irrm(A), typ: 1.8A
Qrr, (nC), type: 109 nC
Packaging: TO3PN, TO247
Keywords:
Transistor, IGBT
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BLG40T65FUL
Insulated-Gate Bipolar Transistor, Single Device
Brand:
Shanghai Belling
Encapsulation:
TO3PN, TO247
Description:
PTOT (Max.): 298 W/VCE(sat), V, typ: 1.55 V/Qg, nC, typ: 110 nC
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- Product Description
- Description
-
Brand: Shanghai Belling
PTOT (Max.): 298 W
VCE(sat), (V), typ: 1.55 V
Qg,(nC),typ:110 nC
Eoff, (mJ), typical: 0.7 mJ
VF, (V), typ: 2.2V
Irrm(A), typ: 1.8A
Qrr, (nC), type: 109 nC
Packaging: TO3PN, TO247
- PTOT (Max.): 298 W/VCE(sat), V, typ: 1.55 V/Qg, nC, typ: 110 nC
Keywords:
Transistor, IGBT
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