Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 35A
RDS(on) (Max.): 12 mΩ
Qg(Type):37nC
Package: PDFN5X6
VDS (Max.): 100V
ID (Max.): 35A
RDS(on) (Max.): 12 mΩ
Qg(Type):37nC
Package: PDFN5X6
Keywords:
Transistor, MOS, MOSFET
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BLP12N10G-Q
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
PDFN5X6
Description:
VDS (Max.): 100V / ID (Max.): 35A / RDS(on) (Max.): 12mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 35A
RDS(on) (Max.): 12 mΩ
Qg(Type):37nC
Package: PDFN5X6
- VDS (Max.): 100V / ID (Max.): 35A / RDS(on) (Max.): 12mΩ
Keywords:
Transistor, MOS, MOSFET
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