Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 66A
RDS(on) (Max.): 8 mΩ
Qg(Type): 45 nC
Packaging: TO252, PDFN5X6
VDS (Max.): 100V
ID (Max.): 66A
RDS(on) (Max.): 8 mΩ
Qg(Type): 45 nC
Packaging: TO252, PDFN5X6
Keywords:
Transistor, MOS, MOSFET
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BLP08N10G-Q.D
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO252, PDFN5X6
Description:
VDS (Max.): 100V / ID (Max.): 66A / RDS(on) (Max.): 8mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 66A
RDS(on) (Max.): 8 mΩ
Qg(Type): 45 nC
Packaging: TO252, PDFN5X6
- VDS (Max.): 100V / ID (Max.): 66A / RDS(on) (Max.): 8mΩ
Keywords:
Transistor, MOS, MOSFET
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