Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 68A
RDS(on)(Max.): 7.5 mΩ
Qg(Type): 54 nC
Packaging: TO252, PDFN5x6
VDS (Max.): 100V
ID (Max.): 68A
RDS(on)(Max.): 7.5 mΩ
Qg(Type): 54 nC
Packaging: TO252, PDFN5x6
Keywords:
Transistor, MOS, MOSFET
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BLP075N10GL-D.Q
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO252, PDFN5x6
Description:
VDS (Max.): 100V / ID (Max.): 68A / RDS(on) (Max.): 7.5 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 68A
RDS(on)(Max.): 7.5 mΩ
Qg(Type): 54 nC
Packaging: TO252, PDFN5x6
- VDS (Max.): 100V / ID (Max.): 68A / RDS(on) (Max.): 7.5 mΩ
Keywords:
Transistor, MOS, MOSFET
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