Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 96A
RDS(on) (Max.): 6.5 mΩ
Qg(Type): 65 nC
Packaging: TO220, TO263
VDS (Max.): 100V
ID (Max.): 96A
RDS(on) (Max.): 6.5 mΩ
Qg(Type): 65 nC
Packaging: TO220, TO263
Keywords:
Transistor, MOS, MOSFET
Pre
Next
BLP065N10GL-P.B
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO220, TO263
Description:
VDS (Max.): 100 V / ID (Max.): 96 A / RDS(on) (Max.): 6.5 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 96A
RDS(on) (Max.): 6.5 mΩ
Qg(Type): 65 nC
Packaging: TO220, TO263
- VDS (Max.): 100 V / ID (Max.): 96 A / RDS(on) (Max.): 6.5 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.