BLP055N09G-P.B
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  • BLP055N09G-P.B

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): 90V
ID (Max.): 131A
RDS(on) (Max.): 5 mΩ
Qg(Type): 80 nC
Packaging: TO220, TO263

Keywords:

Transistor, MOS, MOSFET

BLP055N09G-P.B

N-channel Enhancement-mode Power MOSFET

Category:

Brand:

Shanghai Belling

Encapsulation:

TO220, TO263

Description:

VDS (Max.): 90V / ID (Max.): 131A / RDS(on) (Max.): 5mΩ

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  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): 90V
    ID (Max.): 131A
    RDS(on) (Max.): 5 mΩ
    Qg(Type): 80 nC
    Packaging: TO220, TO263
  • VDS (Max.): 90V / ID (Max.): 131A / RDS(on) (Max.): 5mΩ

Keywords:

Transistor, MOS, MOSFET

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