Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 150V
ID (Max.): 210A
RDS(on) (Max.): 4.2 mΩ
Qg(Type): 162 nC
Packaging: TO220, TO263
VDS (Max.): 150V
ID (Max.): 210A
RDS(on) (Max.): 4.2 mΩ
Qg(Type): 162 nC
Packaging: TO220, TO263
Keywords:
Transistor, MOS, MOSFET
Pre
Next
BLP042N15J-P.B
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO220, TO263
Description:
VDS (Max.): 150V / ID (Max.): 210A / RDS(on) (Max.): 4.2 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 150V
ID (Max.): 210A
RDS(on) (Max.): 4.2 mΩ
Qg(Type): 162 nC
Packaging: TO220, TO263
- VDS (Max.): 150V / ID (Max.): 210A / RDS(on) (Max.): 4.2 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.