BLP03N10-T.BA
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  • BLP03N10-T.BA

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 280A
RDS(on) (Max.): 2.6 mΩ
Qg(Type): 131 nC
Package: TOLL8, TO263-7

Keywords:

Transistor, MOS, MOSFET

BLP03N10-T.BA

N-channel Enhancement-mode Power MOSFET

Category:

Brand:

Shanghai Belling

Encapsulation:

TOLL8, TO263-7

Description:

VDS (Max.): 100V / ID (Max.): 280A / RDS(on) (Max.): 2.6 mΩ

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  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): 100V
    ID (Max.): 280A
    RDS(on) (Max.): 2.6 mΩ
    Qg(Type): 131 nC
    Package: TOLL8, TO263-7
  • VDS (Max.): 100V / ID (Max.): 280A / RDS(on) (Max.): 2.6 mΩ

Keywords:

Transistor, MOS, MOSFET

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