BLP038N15-TT
+
  • BLP038N15-TT

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): 150V
ID (Max.): 281A
RDS(on) (Max.): 3.5 mΩ
Qg(Type): 140 nC
Packaging: TOLT

Keywords:

Transistor, MOS, MOSFET

BLP038N15-TT

N-channel Enhancement-mode Power MOSFET

Category:

Brand:

Shanghai Belling

Encapsulation:

TOLT

Description:

VDS (Max.): 150 V / ID (Max.): 281 A / RDS(on) (Max.): 3.5 mΩ

Share now

  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): 150V
    ID (Max.): 281A
    RDS(on) (Max.): 3.5 mΩ
    Qg(Type): 140 nC
    Packaging: TOLT
  • VDS (Max.): 150 V / ID (Max.): 281 A / RDS(on) (Max.): 3.5 mΩ

Keywords:

Transistor, MOS, MOSFET

High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
Low-noise amplifier chip for GPS receivers
Learn more Learn more
< 1234...489 >

Do you need our help?

Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.

View the Privacy Protection Commitment
Submit now