BLP038N15-P.B
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  • BLP038N15-P.B

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): 150 V
ID (Max.): 239A
RDS(on) (Max.): 3.8 mΩ
Qg(Type): 150 nC
Packaging: TO220, TO263

Keywords:

Transistor, MOS, MOSFET

BLP038N15-P.B

N-channel Enhancement-mode Power MOSFET

Category:

Brand:

Shanghai Belling

Encapsulation:

TO220, TO263

Description:

VDS (Max.): 150 V / ID (Max.): 239 A / RDS(on) (Max.): 3.8 mΩ

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  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): 150 V
    ID (Max.): 239A
    RDS(on) (Max.): 3.8 mΩ
    Qg(Type): 150 nC
    Packaging: TO220, TO263
  • VDS (Max.): 150 V / ID (Max.): 239 A / RDS(on) (Max.): 3.8 mΩ

Keywords:

Transistor, MOS, MOSFET

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