BLP02N08
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  • BLP02N08

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): 85 V
ID (Max.): 326A
RDS(on) (Max.): 2 mΩ
Qg(Type): 240 nC
Packaging: TO220, TO263, TO247

Keywords:

Transistor, MOS, MOSFET

BLP02N08

N-channel Enhancement-mode Power MOSFET

Category:

Brand:

Shanghai Belling

Encapsulation:

TO220, TO263, TO247

Description:

VDS (Max.): 85 V / ID (Max.): 326 A / RDS(on) (Max.): 2 mΩ

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  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): 85 V
    ID (Max.): 326A
    RDS(on) (Max.): 2 mΩ
    Qg(Type): 240 nC
    Packaging: TO220, TO263, TO247
  • VDS (Max.): 85 V / ID (Max.): 326 A / RDS(on) (Max.): 2 mΩ

Keywords:

Transistor, MOS, MOSFET

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