Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 60V
ID (Max.): 203A
RDS(on) (Max.): 2.3 mΩ
Qg(Type): 68 nC
Package: TO252
VDS (Max.): 60V
ID (Max.): 203A
RDS(on) (Max.): 2.3 mΩ
Qg(Type): 68 nC
Package: TO252
Keywords:
Transistor, MOS, MOSFET
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BLP02N06L-D
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO252
Description:
VDS (Max.): 60 V / ID (Max.): 203 A / RDS(on) (Max.): 2.3 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 60V
ID (Max.): 203A
RDS(on) (Max.): 2.3 mΩ
Qg(Type): 68 nC
Package: TO252
- VDS (Max.): 60 V / ID (Max.): 203 A / RDS(on) (Max.): 2.3 mΩ
Keywords:
Transistor, MOS, MOSFET
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