Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 110V
ID (Max.): 234A
RDS(on) (Max.): 2.7 mΩ
Qg(Type):123 nC
Encapsulation: TOLL8
VDS (Max.): 110V
ID (Max.): 234A
RDS(on) (Max.): 2.7 mΩ
Qg(Type):123 nC
Encapsulation: TOLL8
Keywords:
Transistor, MOS, MOSFET
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BLP027N11-T
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TOLL8
Description:
VDS (Max.): 110V / ID (Max.): 234A / RDS(on) (Max.): 2.7 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 110V
ID (Max.): 234A
RDS(on) (Max.): 2.7 mΩ
Qg(Type):123 nC
Encapsulation: TOLL8
- VDS (Max.): 110V / ID (Max.): 234A / RDS(on) (Max.): 2.7 mΩ
Keywords:
Transistor, MOS, MOSFET
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