Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 261A
RDS(on) (Max.): 2.5 mΩ
Qg(Type): 168 nC
Packaging: TO220, TO263
VDS (Max.): 100V
ID (Max.): 261A
RDS(on) (Max.): 2.5 mΩ
Qg(Type): 168 nC
Packaging: TO220, TO263
Keywords:
Transistor, MOS, MOSFET
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BLP025N10-P.B
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TO220, TO263
Description:
VDS (Max.): 100V / ID (Max.): 261A / RDS(on) (Max.): 2.5 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 261A
RDS(on) (Max.): 2.5 mΩ
Qg(Type): 168 nC
Packaging: TO220, TO263
- VDS (Max.): 100V / ID (Max.): 261A / RDS(on) (Max.): 2.5 mΩ
Keywords:
Transistor, MOS, MOSFET
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