Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 401A
RDS(on) (Max.): 1.4 mΩ
Qg(Type): 240 nC
Encapsulation: TOLL8
VDS (Max.): 100V
ID (Max.): 401A
RDS(on) (Max.): 1.4 mΩ
Qg(Type): 240 nC
Encapsulation: TOLL8
Keywords:
Transistor, MOS, MOSFET
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BLP014N10-T
N-channel Enhancement-mode Power MOSFET
Brand:
Shanghai Belling
Encapsulation:
TOLL8
Description:
VDS (Max.): 100V / ID (Max.): 401A / RDS(on) (Max.): 1.4 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 401A
RDS(on) (Max.): 1.4 mΩ
Qg(Type): 240 nC
Encapsulation: TOLL8
- VDS (Max.): 100V / ID (Max.): 401A / RDS(on) (Max.): 1.4 mΩ
Keywords:
Transistor, MOS, MOSFET
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