Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 650V
ID (Max.): 8A
RDS(on) (Max.): 560 mΩ
Qg(Type): 16 nC
Packaging: TO220, TO220F, TO251, TO252
VDS (Max.): 650V
ID (Max.): 8A
RDS(on) (Max.): 560 mΩ
Qg(Type): 16 nC
Packaging: TO220, TO220F, TO251, TO252
Keywords:
Transistor, MOS, MOSFET
Pre
Next
BLS65R560
Super-junction Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO220F, TO251, TO252
Description:
VDS (Max.): 650 V / ID (Max.): 8 A / RDS(on) (Max.): 560 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 650V
ID (Max.): 8A
RDS(on) (Max.): 560 mΩ
Qg(Type): 16 nC
Packaging: TO220, TO220F, TO251, TO252
- VDS (Max.): 650 V / ID (Max.): 8 A / RDS(on) (Max.): 560 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.