BL9N20
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO251, TO252
Description:
VDS (Max.): 200 V / ID (Max.): 9 A / RDS(on) (Max.): 360 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 200V
ID (Max.): 9A
RDS(on) (Max.): 360 mΩ
Qg(Type): 12 nC
Packaging: TO251, TO252
- VDS (Max.): 200 V / ID (Max.): 9 A / RDS(on) (Max.): 360 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.