BL40N30L
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO247, TO3PN
Description:
VDS (Max.): 300 V / ID (Max.): 40 A / RDS(on) (Max.): 120 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 300V
ID (Max.): 40A
RDS(on) (Max.): 120 mΩ
Qg(Type): 122 nC
Packaging: TO247, TO3PN
- VDS (Max.): 300 V / ID (Max.): 40 A / RDS(on) (Max.): 120 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.