BL40N25
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO247, TO3PN
Description:
VDS (Max.): 250 V / ID (Max.): 40 A / RDS(on) (Max.): 80 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 250V
ID (Max.): 40A
RDS(on) (Max.): 80 mΩ
Qg(Type): 40 nC
Packaging: TO247, TO3PN
- VDS (Max.): 250 V / ID (Max.): 40 A / RDS(on) (Max.): 80 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.