BL23N50
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO220F, TO3PN, TO3PF
Description:
VDS (Max.): 500V / ID (Max.): 23A / RDS(on) (Max.): 0.27 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 500V
ID (Max.): 23A
RDS(on) (Max.): 0.27 mΩ
Qg(Type):61 nC
Packaging: TO220, TO220F, TO3PN, TO3PF
- VDS (Max.): 500V / ID (Max.): 23A / RDS(on) (Max.): 0.27 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.