BL12N65
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO220F
Description:
VDS (Max.): 650 V / ID (Max.): 12 A / RDS(on) (Max.): 620 mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 650V
ID (Max.): 12A
RDS(on) (Max.): 620 mΩ
Qg(Type): 49 nC
Packaging: TO220, TO220F
- VDS (Max.): 650 V / ID (Max.): 12 A / RDS(on) (Max.): 620 mΩ
Keywords:
Transistor, MOS, MOSFET
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.